陈心满，男，江西人，博士、副研究员、硕士生导师。2009年中山大学凝聚态物理专业博士毕业。在新一代非挥发性存储器—阻变存储器（RRAM）的性能优化和物理机制探索、纳米结构的设计制备及在超级电容器方面的应用等领域并取得一些创新性成果，多次在相关学术会议上口头报告研究进展。近年来已在Appl. Phys. Lett.、Electrochimica Acta等国际重要学术期刊上发表SCI 学术论文40余篇，论文已被他引500余次。申请国家发明专利多项，主持包括国家自然科学基金、教育部博士点基金、广东省自然科学基金、广州市科技计划等在内的多个科研项目。纳入广东省 “千百十人才培养工程” 华南师范大学校级培养计划，广东省科技库入库专家，也是Appl. Phys. Lett.、Nanotechnology、ACS Appl. Mater. Interface及Chem. Eng. J.、Electrochimica Acta等多个国际学术刊物的通讯评审。

联系电话：020-85215603-812；

邮箱：xmchenscnu@163.com

主持项目：

[1] Dongliang Wang, Fengzhen Ji, Xinman Chen, (通讯) Yan Li, Baofu Ding, and Yong Zhang, Quantum conductance in MoS₂ quantum dots-based nonvolatile resistive memory device, Appl. Phys. Lett. 110, 093501 (2017);

[2] Liping Kuang , Fengzhen Ji , Xuexue Pan, Dongliang Wanga, Xinman Chen,(通讯) Dan Jiang, Yong Zhang, Baofu Ding, Mesoporous MnCo₂O_4.5 nanoneedle arrays electrode for high-performance asymmetric supercapacitor application. Chem. Eng. J. 315 (2017) 491–499

[3] F. Z. Ji, D. Jiang, X. M. Chen,* X. X Pan, L. P. Kuang, Y. Zhang, K. Alamesh, B. F. Ding, Simple in-situ growth of layered Ni₃S₂ thin film electrode for the development of high-performance supercapacitors, Appl. Surf. Sci. 399, 432 (2017)

[4] X. M. Chen, (通讯) W. Hu, Y. Li, S. X. Wu, D. H. Bao, Complementary resistive switching evolved from bipolar TiN/HfO₂/Pt device, Appl. Phys. Lett. 108, 053504 (2016) 

[5] X. X Pan, F. Z. Ji, L. P. Kuang, F. Liu, Y. Zhang, X. M. Chen, (通讯) B. F. Ding, K. Alamesh, Synergetic effect of three-dimensional Co₃O₄@Co(OH)₂ hybrid nanostructure fore electrochemical energy storage, Electrochimica Acta, 215, 298, (2016)

[6] Y. Li, X. X Pan, Y. Zhang, X. M. Chen*, Write-Once-Read-Many-Times and Bipolar Resistive Switching Characteristics of TiN/HfO₂/Pt Devices Dependent on the Electroforming Polarity, IEEE Electron Dev. Lett. 36, 1149 (2015)  

[7] Xuexue Pan, Xinman Chen, Yan Li, Zenan Yu, Facile Synthesis of Co3O4 Nanosheets Electrode with Ultrahigh Specific Capacitance for Electrochemical Supercapacitors, Electrochimica Acta 182, 1101 (2015)

[8] X. M. Chen, W. Hu, S. X. Wu, D. H. Bao. Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current, Appl. Phys. Lett. 104, 043508 (2014)

[9] X. M. Chen, W. Hu, S. X. Wu, D. H. Bao. Complementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays, J. Alloys Compds. 615, 566 (2014)

[10] X. M. Chen, G. H. Wu, D. H. Bao. Resistive switching behavior of Pt/Mg_0.2Zn_0.8O/Pt devices for nonvolatile memory applications, Appl. Phys. Lett. 93, 093501 (2008)

[11]  X. M. Chen, G. H. Wu, W. F. Liu, P. Jiang, D. H. Bao. Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications, Appl. Phys. Lett. 94, 033501 (2009)

[12]  X. M. Chen, K. B. Ruan, G. H. Wu, D. H. Bao. Tuning electrical properties of transparent p-NiO/n-MgZnO heterojunctions with band gap engineering of MgZnO, Appl. Phys. Lett. 93, 112112 (2008)